Publication
Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatures 600-650 degrees C which prevents lasing of these structures fused on GaAs substrates. It is shown that the degradation of luminescence characteristics can be decreased by increasing the growth temperature to 480 degrees C and V/III ratio to 4. InAsP/InGaAsP and InGaAs/InGaAsP laser diodes on GaAs substrates have been obtained by localized wafer fusion at 650 degrees C.
Elyahou Kapon, Alexandru Mereuta, Andrei Caliman
Tobias Kippenberg, Nikolai Kuznetsov, Alisa Davydova, Alberto Nardi, Miles Henry Anderson