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Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those photonic chips to their full potential. Recently, novel concepts involving topological designs introduced a variety of options for tuning device properties, such as the desired single-mode emission. Here, we introduce a novel cavity design that allows amplification of the topological interface mode by deterministic placement of gain material within a topological lattice. The proposed design is experimentally implemented by a selective epitaxy process to achieve closely spaced Si and InGaAs nanorods embedded within the same layer. This results in the first demonstration of a single-mode laser in the telecom band using the concept of amplified topological modes without introducing artificial losses.
Philip Johannes Walter Moll, Chunyu Guo, Hao Yang
Tobias Kippenberg, Rui Ning Wang, Andrey Voloshin, Xinru Ji, Zheru Qiu, Andrea Bancora, Yang Liu
Camille Sophie Brès, Marco Clementi, Jiaye Wu, Qian Li