Publication

Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform

Related publications (363)

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Absorptive Limiter for Frequency-Selective Circuits

This letter describes a novel absorptive limiter for frequency-selective circuits. The proposed circuit allows the design of absorptive limiters based on a bi-state phase shifter, which is appropriate for integration into channelizing devices, such as hybr ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Encapsulated Low Frequency Vibrating Body Field Effect Resonator

Marion Hermersdorf

Resonators for time and frequency reference applications are essential elements found in most electronic devices surrounding us. The continuous minimization and ubiquitous distribution of such electronic devices and circuits demands for resonators of small ...

EPFL2013

The Road to Affordable, Large-Scale Silicon Photonics

Christophe Marcel Georges Galland

Large-scale optical systems in silicon can become a reality by building upon the existing infrastructure. Due to the shifting economics of silicon photonics, some cost-effective fabless silicon products may even emerge over the next several years. ...

2013

Ferroelectric tunnel fet switch and memory

Mihai Adrian Ionescu

A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n junct ...

2013

3.5-D Integration: A Case Study

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Vasileios Pavlidis, Shashi Kanth Bobba, Ciprian Seiculescu

Two diverse manufacturing techniques for building 3-D integrated systems are vertical integration with Through-Silicon-Vias (TSVs), also referred to as 3-D TSV integration, and 3-D monolithic integration. In this paper, we present a hybrid integration sche ...

2013

3D-Integration of a Carbon Nanotube based RF-NEMS

Rokhaya Gueye

In the framework of the NanoTera project CabTuRes, a system-in-package for a nano-resonator was proposed, integrating CMOS driving electronics and vacuum encapsulation. This doctoral research aimed to investigate 3D-integration technologies for a Single-Wa ...

EPFL2013

High-k dielectric FinFETs towards Sensing Integrated Circuits

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

This work presents a well-defined electronic device, namely a n-channel high-k dielectric FinFET (Fin Field Effect Transistor) as new label-free sensor for enhanced sensing integrated circuits. Metal gate FinFETs on bulk Si have been successfully electrica ...

IEEE2013

Post-CMOS Processing and 3-D Integration Based on Dry-Film Lithography

Carlotta Guiducci, Yusuf Leblebici, Yüksel Temiz

This paper presents a chip-level postcomplementary metal oxide semiconductor (CMOS) processing technique for 3-D integration and through-silicon-via (TSV) fabrication. The proposed technique is based on dry-film lithography, which is a low-cost and simple ...

Ieee-Inst Electrical Electronics Engineers Inc2013

On performance scaling and speed of junctionless transistors

Jean-Michel Sallese, Adil Koukab

A prospective study of the junctionless transistors (JLTs) scaling performances based both on TCAD and analytical evaluations of the intrinsic delay after considering on/off voltage constraints is proposed. The tradeoffs between speed and switching power p ...

Pergamon-Elsevier Science Ltd2013

Broadband on-chip optical non-reciprocity using phase modulators

Christophe Marcel Georges Galland, Ran Ding

Breaking the reciprocity of light propagation in a nanoscale photonic integrated circuit (PIC) is a topic of intense research, fostered by the promises of this technology in areas ranging from experimental research in classical and quantum optics to high-r ...

Optical Society of America2013