Publication

Direct processes in the energy deposition of protons in silicon

Related publications (34)

Control of morphology (ZrN crystallite size and SiNx layer thickness) in Zr-Si-N nanocomposite thin films

DC reactive magnetron sputtering was used for the deposition of Zr–Si–N thin films. Four series of samples have been deposited at various substrate temperatures TS: 300 K, 510 K, 710 K and 910 K. Depending on TS, different N2 partial pressures pN2 were req ...

2008

Oxygen assisted focused electron beam induced deposition of silicon dioxide

Alexandre Perentes

Focused Electron Beam Induced Deposition (FEBID) is a rapid prototyping technique for the investigation, production and modification of 2 and 3-D nanostructures. The process takes place at room temperature, in the high-vacuum chamber of a Scanning Electron ...

EPFL2007

Overview of co-deposition and fuel inventory in castellated divertor structures at JET

Richard Pitts

The main focus of this work is fuel retention in plasma components of the JET water-cooled Mk-I divertors operated with small tiles, first with carbon fibre composite (CFC) and then with castellated beryllium. Until recently these have been the only large- ...

2007

Corrugated membranes for improved pattern definition with micro/nanostencil lithography

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

We present a MEMS process for the fabrication of arbitrary (adaptable to specific aperture geometries) stabilization of silicon nitride membranes to be used as miniature shadow masks or (nano) stencils. Stabilization was realized by the fabrication of sili ...

2006

Localized electrochemical deposition of copper monitored using real-time X-ray microradiography

Giorgio Margaritondo

We have developed a novel strategy for localized electrochemical deposition (LECD) to improve both the lateral resolution of the process and the porosity of the fabricated high-aspect-ratio microstructures. The strategy is based on accurately controlling t ...

2005

Nucleation and growth of ultrathin pentacene films on silicon dioxide: effect of deposition rate and substrate temperature

Frank Nüesch, Libero Zuppiroli

We report on a study of pentacene thin-films grown by high vacuum deposition on silicon dioxide, using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The nucleation density of pentacene islands on SiO2is found to rise ...

Elsevier2004

Correlated growth in ultrathin pentacene films on silicon oxide: effect of deposition rate

Frank Nüesch, Libero Zuppiroli

Understanding the growth mechanism in molecular organic thin films is fundamental to their applications in organic electronics. We present an extensive study of the growth mechanism of pentacene thin films on silicon dioxide (SiO2) using atomic ...

APS through AIP2004

Orienting tetracene and pentacene thin films onto friction-transferred poly(tetrafluoroethylene) substrate

Frank Nüesch, Libero Zuppiroli

Oriented films of tetracene and pentacene have been obtained by high vacuum sublimation onto oriented poly(tetrafluoroethylene) (PTFE) substrates. Polymorphism, orientation, and morphology of the pentacene and tetracene films are studied as a function of d ...

ACS2003

Selective light induced chemical vapour deposition of titanium dioxide thin films

Estelle Wagner

Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substr ...

EPFL2003

Effusing source for film deposition of reservoir, comprises hole having hole diameter less than one order of magnitude than mean free path of molecules

Patrik Willi Hoffmann, Simone Amorosi, Giacomo Benvenuti

The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure ...

ECOLE POLYTECHNIQUE FEDERALE LAUSANNE (ECOL-Non-standard) BENVENUTI G (BENV-Individual) AMOROSI S (AMOR-Individual) HALARY-WAGNER E (HALA-Individual)2002

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