Design, characterisation and modelling of a high current DC arc plasma source for silicon and silicon carbide processing at low pressure
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Partial-depth modulation of the rf power in a capacitive discharge is used to investigate the relative importance of negative ions and neutral radicals for particle formation in low-power low-pressure silane plasmas. For less than 85% modulation depth, ani ...
The influence of Ta, Ti and TiO2 adhesion layers with Pt bottom electrodes and the deposition temperature of the metallization on the nucleation and growth of sol-gel derived Pb(Zr0.53Ti0.47)O-3 thin films is reported. Several different PZT annealing profi ...
Microcrystalline silicon (μc-Si:H) layers deposited by the very high-frequency-glow discharge technique at a radio-frequency excitation of 70 MHz are observed to be basically slightly 〈n〉 type. By doping (so-called]] microdoping") with boron in the gas pha ...
Thin, hydrogenated silicon and carbon containing films have been deposited by the siliconization procedure on targets made from some metal alloys, pure metals, graphite and Si single crystal. The deposits were investigated by electron microprobe and surfac ...
Deposition, integration and application issues of ferroelectric thin films are briefly reviewed. Applications in ultrasonic micromotors and infra-red sensors are treated in more detail. Current results on stress measurements across the ferroelectric phase ...
