Design, characterisation and modelling of a high current DC arc plasma source for silicon and silicon carbide processing at low pressure
Publications associées (180)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added. A dark conductivity of 1.6×10-8 S/cm and an activation energy of 0.62 eV are obtai ...
a-Si:H i-layers were deposited at different substrate temperatures and plasma excitation frequencies, while the other deposition parameters were kept constant. These layers were characterised by measuring the intrinsic mechanical stress and the defect dens ...
Deposition, integration and application issues of ferroelectric thin films are briefly reviewed. Applications in ultrasonic micromotors and infra-red sensors are treated in more detail. Current results on stress measurements across the ferroelectric phase ...
Non-uniform voltage distribution across the electrode area results in inhomogeneous thin-film RF plasma deposition in large-area reactors. In this work, a two-dimensional analytic model for the calculation of the voltage distribution across the electrode a ...
The influence of Ta, Ti and TiO2 adhesion layers with Pt bottom electrodes and the deposition temperature of the metallization on the nucleation and growth of sol-gel derived Pb(Zr0.53Ti0.47)O-3 thin films is reported. Several different PZT annealing profi ...
Measurements of anions and cations are reported for hydrocarbon and silane radio frequency capacitive glow discharges. Series of anions were observed by quadrupole mass spectrometry using power-modulated plasmas, and their structures are interpreted from t ...
The paper reviews different aspects of deposition, integration, and device fabrication of PbZrxTi1-xO3 (PZT) films for application in micromechanical systems. The deposition of such films and the principal processes for their integration onto silicon subst ...
Microcrystalline silicon (μc-Si:H) layers deposited by the very high-frequency-glow discharge technique at a radio-frequency excitation of 70 MHz are observed to be basically slightly 〈n〉 type. By doping (so-called]] microdoping") with boron in the gas pha ...
Thin, hydrogenated silicon and carbon containing films have been deposited by the siliconization procedure on targets made from some metal alloys, pure metals, graphite and Si single crystal. The deposits were investigated by electron microprobe and surfac ...
Partial-depth modulation of the rf power in a capacitive discharge is used to investigate the relative importance of negative ions and neutral radicals for particle formation in low-power low-pressure silane plasmas. For less than 85% modulation depth, ani ...