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We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to the interfaces between the GaAs matrix and InAs dots are probed using polarized excitation and detection. We suggest a possible role of local fields in models of the matrix-dot mixtures in the in-plane anisotropic response.
Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller
Christophe Ballif, Quentin Thomas Jeangros, Christian Michael Wolff, Chien-Jen Yang, Peter Joseph Fiala, Pietro Caprioglio