Publication

Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots

2005
Journal paper

Abstract

We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to the interfaces between the GaAs matrix and InAs dots are probed using polarized excitation and detection. We suggest a possible role of local fields in models of the matrix-dot mixtures in the in-plane anisotropic response.

Official source

https://infoscience.epfl.ch/record/130643?ln=en

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Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots

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