Publication

Features of Charge Carrier Transport Determined from Carrier Extraction Current in µc-Si:H

Xavier Niquille
2002
Journal paper
Abstract

Temperature and electric field dependencies of mobility and concentration transients of electrons and holes using modified charge extraction by the linearly increasing voltage (CELIV) method in slightly doped n-type, p-type and undoped microcrystalline silicon (μc-Si:H) have been investigated. The results indicates that: the mobility of majority carriers causes temperature and electric field dependencies of conductivity; the photoconductivity transient is mainly determined by transient of charge carrier concentration; at room temperature the charge carrier transport is controlled by multiple trapping to energetic distributed localised states; at lower temperature the features characteristic of hopping transport have been obtained. © 2002 Elsevier Science B.V. All rights reserved.

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