Crystalline silicon

Summary

Crystalline silicon or (c-Si) Is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are assembled into solar panels as part of a photovoltaic system to generate solar power from sunlight. In electronics, crystalline silicon is typically the monocrystalline form of silicon, and is used for producing microchips. This silicon contains much lower impurity levels than those required for solar cells. Production of semiconductor grade silicon involves a chemical purification to produce Hyper-pure Polysilicon, followed by a recrystallization process to grow monocrystalline silicon. The cylindrical boules are then cut into wafers for further processing. Solar cells made of crystalline silicon are often called conventional, traditional, or fi

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https://en.wikipedia.org/wiki/Crystalline_silicon

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N-type nanocrystalline silicon (nc-Si:H(n)) layers are good candidates to improve current and transport properties in heterojunction solar cells. In this work, we perform thickness series alongside PH3 doping series to unravel the desirable characteristics of nc-Si:H(n) along its growth direction. While increasing the PH3 flow is necessary to improve the conductivity of the layer, we observe that too high flows lead to an amorphization of the first 10???15 nm of the layers. In consequence, either high crystallinity are reached at intermediate PH3 flow, resulting in high doping at the n/TCO interface but a poorly doped nucleation zone, or the material becomes more amorphous at very high PH3 flow, allowing a higher doping in the nucleation zone but a less efficient screening of the barrier with the TCO due to the lower crystallinity. To overcome this trade-off, we integrate a 2.5 nm a-Si:H(n) layer underneath the nc-Si:H(n) layer. We also report on the impact of higher ITO doping as well as on the beneficial effect of an additional SiOx capping not only to form a double anti-reflective coating (DARC), but also to improve contact properties. We observe that each of those three features can improve passivation and selectivity as well as reduce strongly the front contact resistivity (????????????????????????????????????). Our best results are achieved by using a thin a-Si:H(n)/nc-Si:H(n) stack together with an IZrO/SiOx DARC, enabling front ????????????????????????????????????lower than 15 m?? cm2 and an efficiency of 23.7% on screen-printed 2 ?? 2 cm2 solar cells. Superscript/Subscript Available

ELSEVIER2022

Effect of ZnO on the reactivity of cementitious systems

Andrea Eloisa Teixeira Pita

One of the biggest driving forces in cement research today is the mitigation of the CO2 emissions caused by its production. A potential solution to reduce the environmental impact is to replace cement with supplementary cementitious materials (SCMs). This replacement results in low strength at early ages because they are slow to react. The incorporation of minor elements has shown the potential to improve cement reactivity. A few percent of ZnO in C3S causes a signifi- cant increase in reactivity. This effect was related to the incorporation of zinc into the C-S-H struc- ture, which increases its needle length. This research investigates the effect of ZnO in more realis- tic systems such as alite, C3A-polyclinker, and C4AF-polyclinker. The positive effects observed in C3S are translated in the alite system, but differences were found in the polyclinkers, which have a prolonged induction period. This resulted due concentration of zinc in the interstitial phases and a small amount of zinc in alite phase. An amorphous phase was identified in the C3A polyclinker; it is believed to react rapidly with water, releasing Zn ions into the solution, which delays the reaction of alite. The addition of more gypsum controls the reaction of this phase, and thus the induction period is shortened.This work explores the possibilities of retaining Zn in alite to enhance the reactivity of more realis- tic cementitious systems. The cooling rate was critical, as a slow cooling rate promoted more Zn in the alite, less amorphous, and hence, an enhancement in the hydration of C3A-polyclinker doped with ZnO. The recalcination of this system did not affect the hydration of alite but increased the amount of crystalline C3A, which reacted faster. Thus, the amorphous phase was related to an aluminate phase. Moreover, a C4AF-polyclinker and a system with a lower amount of interstitial phase were investigated. The results showed a higher Zn concentration in alite but also extended induction periods. This was associated with the free ZnO and the amorphous content. Even when the hydration was delayed, the height of the alite peak increased with Zn doping, probably due to the incorporation of Zn into the C-S-H observed in pure C3S.In addition, the interaction between sulfates and zinc in the alite system doped with ZnO was in- vestigated. Severe retardation was observed, and the reason is proposed to be the formation of amorphous Zn compound. The presence of aluminum, ettringite formation, or an amorphous layer were discarded as the cause of the retardation.

EPFL2022

Development of high band gap protocrystalline material for p-i-n thin film silicon solar cells

Fabio Maurizio

High band gap thin film silicon solar cells are of high interest for the use as top cell in triple junctions solar cells. Protocrystalline silicon, in the transition phase between amorphous and microcrystalline silicon, is such a high band gap material. During this project, protocrystalline intrinsic layers have been developed and optimized in p-i-n single junction solar cells by plasma-enhanced chemical vapour deposition (PECVD) in a new multi-chamber deposition system. In the first series, cells and layers were deposited with different dilutions going from silane to hydrogen flux ratios of 1:1 to 1:64. At the dilutions 1:16 and 1:32, protocrystalline ma-terial was obtained which showed amorphous characteristics only up to a certain thickness, where crystallites started to evolve. With dilution 1:16, a second cell series has been deposited with variation of the intrinsic layer thick-ness. The best cells in terms of open-circuit voltage and fill factor product were obtained with an i-layer thickness of 100 nm. These cells have open-circuit voltages and fill factors up to 0.975 V and 75.8 % (0.932 V and 69.9 %) for the initial (degraded) state. These are promising values for the use of this material in top cells. However, the low current density means that the optimum i-layer thickness is probably higher for triple cell application. Further cells have been deposited at different temperatures. These results imply that there is still room for further optimization, when current limitations of the heating system will be overcome.

2012

Effect of ZnO on the reactivity of cementitious systems

Andrea Eloisa Teixeira Pita

EPFL2022