Microstructure and Open-Circuit Voltage of n-i-p Microcrystalline Silicon Solar Cells
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Zinc oxide (ZnO) is a material that belongs to the family of Transparent Conductives Oxides (TCO). Its non-toxicity and the abundant availability in the Earth's crust of its components make it an ideal candidate as electrical transparent contact for thin-f ...
Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007
A series of nip-type microcrystalline silicon (μc-Si:H) single-junction solar cells has been studied by electrical characterisation, by transmission electron microscopy (TEM) and by Raman spectroscopy using 514 and 633 nm excitation light and both top- and ...
A fast and sensitive method for measurement of spectral dependence of the optical absorption coefficient α(E) in thin films of photosensitive materials is introduced. A Fourier transform infrared (FTIR) spectrometer is used with a photoconductive sample as ...
Single-junction microcrystalline silicon (mu c-Si:H) solar cells of selected i-layer crystalline volume fractions were light soaked (AM1.5, 1000 h at 50 degrees C) and subsequently annealed at increasing temperatures. The variations of subbandgap absorptio ...
Basic limitations of single-junction and tandem p-n and p-i-n diodes are established from thermodynamical considerations on radiative recombination and semi-empirical considerations on the classical diode equations. These limits are compared to actual valu ...
The optical absorption coefficient of amorphous and microcrystalline silicon was determined in a spectral range 400-3100 nm and a temperature range 77-350 K. Transmittance measurement and Fourier transform photocurrent spectroscopy were used. The measured ...
The qualitative description of the major microstructure characteristics of microcrystalline silicon is achieved through a three-dimensional discrete dynamical growth model. The model is based on three fundamental processes that determine surface morphology ...
Plasma enhanced chemical vapour deposition (PECVD) of thin films such as amorphous silicon has widespread applications especially in the field of photovoltaic solar cells and thin-film transistors for flat screen production. Industrial applications require ...
The determination of the crystalline volume fraction from the Raman spectra of microcrystalline silicon involves the knowledge of a material parameter called the Raman emission cross-section ratio y. This value is still debated in the literature. In the pr ...