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The determination of the crystalline volume fraction from the Raman spectra of microcrystalline silicon involves the knowledge of a material parameter called the Raman emission cross-section ratio y. This value is still debated in the literature. In the present work, the determination of y has been carried out on the basis of quantitative analysis of medium-resolution transmission electron microscopy (TEM) micrographs performed on one layer deposited by very high frequency plasma enhanced chemical vapor deposition (VHF- PECVD) close to the amorphous/microcrystalline transition. Subsequent comparison of these data with the crystallinity as evaluated from measured Raman spectra yields a surprisingly high value of y = 1.7. This result is discussed in relation to previously published values (that range from 0.1 to 0.9). © 2006 Elsevier B.V. All rights reserved.
Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Xavier Niquille, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger, Martin Ledinsky
Christophe Ballif, Mathieu Gérard Boccard, Raphaël Monnard, Angela Nicole Fioretti
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