Publication

Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

Related publications (78)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

Graph Chatbot

Chat with Graph Search

Light-induced Voc increase and decrease in high-efficiency amorphous silicon solar cells

Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

First-Principles Determination of Phonon Lifetimes, Mean Free Paths, and Thermal Conductivities in Crystalline Materials: Pure Silicon and Germanium

Comparison of two optimized readout chains for low light CIS

Coupling light into thin silicon layers for high-efficiency solar cells

Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

Large Micromirror Array Based on a Scalable Technology for Astronomical Instrumentation

High numerical aperture silicon collimating lens for mid-infrared quantum cascade lasers manufactured using wafer-level techniques

Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study