Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
A new technique for driving silicon-on-insulator pixel matrixes has been proposed in [1], which was based on transient charge pumping for evacuating the extra photogenerated charges from the body of the transistor. An 8x8 pixel matrix was designed and fabr ...
We present a CMOS image sensor with deep-subwavelength, digital 1-T pixels designed for use in a digital film concept known as Gigavision (GV) camera. In GV, the levels of gray in the picture are derived from the concentration of activated pixels. Activate ...
We propose a modification to the standard Bayer CFA and photodiode structure for CMOS image sensors, which we call 2PFC (Two Pixels, Full Color). The blue and red filters of the Bayer pattern are replaced by a magenta filter. Under each magenta filter are ...
A modification to the standard Bayer CFA and photodiode structure for CMOS image sensors is proposed, which we call 2PFC™, meaning “Two Pixel, Full Color”. The blue and red filters of the Bayer pattern are replaced by magenta filters. Under each magenta fi ...
A pixel circuit for CMOS active sensor imaging applications is presented. An in-pixel open-loop voltage amplifier achieves efficient bandwidth limitation using low capacitance values, and it allows excellent reduction of downstream readout circuit noise, t ...
Detection of scintillation light from LSO (Lutetiumoxyorthosilicate) crystals used in positron emission tomography (PET) is traditionally based on photo- multipliers. The proposal is to develop a novel photo- sensor, which is based on vertically integratin ...
Silicon is an excellent detector material for electromagnetic radiation in the wavelength range of 0.1 to 1000 nm. In the visible spectral range (400-700 nm), external quantum efficiencies approaching 100% are obtained. When combined with the amazing minia ...
A measurement method is reported to distinguish the different mechanisms that lead to image lag in image sensors based on pinned photodiodes (PPDs). This new method can differentiate between the lag caused by a potential barrier or pocket and gate traps in ...
Institute of Electrical and Electronics Engineers2012
Complementary metal oxide semiconductor (CMOS) image sensors are more compatible than charge coupled devices (CCDs) for lab-on-a-chip platforms due to their inherited advantages. However, without the noise reduction circuits, CMOS technology wouldn’t be ab ...
2011
, , ,
The objective of this work is the systematic study of the use of electrochemical readout for advanced diagnosis and drug monitoring. Whereas to date various electrochemical principles have been studied and successfully tested, they typically operate on a s ...
