Publication
Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
Publications associées (58)
Experimental Analysis of Lag Sources in Pinned Photodiodes
Maher Kayal, Nicolas Blanc, Lysandre-Edouard Bonjour
A measurement method is reported to distinguish the different mechanisms that lead to image lag in image sensors based on pinned photodiodes (PPDs). This new method can differentiate between the lag caused by a potential barrier or pocket and gate traps in ...
Institute of Electrical and Electronics Engineers2012A Switched Capacitor Fully Differential Correlated Double Sampling Circuit for CMOS Image Sensors
Sandro Carrara, Yusuf Leblebici, Gözen Köklü
Complementary metal oxide semiconductor (CMOS) image sensors are more compatible than charge coupled devices (CCDs) for lab-on-a-chip platforms due to their inherited advantages. However, without the noise reduction circuits, CMOS technology wouldn’t be ab ...
2011The Gigavision Camera: A 2Mpixel Image Sensor with 0.56um2 1-T Digital Pixels
Edoardo Charbon, Hyungjune Yoon
We present a CMOS image sensor with deep-subwavelength, digital 1-T pixels designed for use in a digital film concept known as Gigavision (GV) camera. In GV, the levels of gray in the picture are derived from the concentration of activated pixels. Activate ...
2011An Integrated Platform for Advanced Diagnostics
Giovanni De Micheli, Sandro Carrara, Cristina Boero, Seyedeh Sara Ghoreishizadeh
The objective of this work is the systematic study of the use of electrochemical readout for advanced diagnosis and drug monitoring. Whereas to date various electrochemical principles have been studied and successfully tested, they typically operate on a s ...
20112PFC (Two Pixels, Full Color): Image Sensor Demosaicing and Characterization
We propose a modification to the standard Bayer CFA and photodiode structure for CMOS image sensors, which we call 2PFC (Two Pixels, Full Color). The blue and red filters of the Bayer pattern are replaced by a magenta filter. Under each magenta filter are ...
2010Measurement and Performance Evaluation of a Silicon On Insulator Pixel Matrix
Maher Kayal, Jean-Michel Sallese, Louis Harik
A new technique for driving silicon-on-insulator pixel matrixes has been proposed in [1], which was based on transient charge pumping for evacuating the extra photogenerated charges from the body of the transistor. An 8x8 pixel matrix was designed and fabr ...
20102PFC™ Image Sensors: Better Image Quality at Lower Cost
A modification to the standard Bayer CFA and photodiode structure for CMOS image sensors is proposed, which we call 2PFC™, meaning “Two Pixel, Full Color”. The blue and red filters of the Bayer pattern are replaced by magenta filters. Under each magenta fi ...
2009A Low-Noise CMOS Imaging Pixel Circuit with In-Pixel Voltage Amplification
A pixel circuit for CMOS active sensor imaging applications is presented. An in-pixel open-loop voltage amplifier achieves efficient bandwidth limitation using low capacitance values, and it allows excellent reduction of downstream readout circuit noise, t ...
2009Quantum efficiency measurement of n–i–p a-Si:H photodiode array on CMOS circuit for positron emission tomography (PET)
Sylvain Dunand, Werner Lustermann, Matthieu Despeisse
Detection of scintillation light from LSO (Lutetiumoxyorthosilicate) crystals used in positron emission tomography (PET) is traditionally based on photo- multipliers. The proposal is to develop a novel photo- sensor, which is based on vertically integratin ...
2008Semiconductor Image Sensing
Silicon is an excellent detector material for electromagnetic radiation in the wavelength range of 0.1 to 1000 nm. In the visible spectral range (400-700 nm), external quantum efficiencies approaching 100% are obtained. When combined with the amazing minia ...
Springer2008