Publication

Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

Related publications (51)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

Graph Chatbot

Chat with Graph Search

Band-edge levels in semiconductors and insulators: Hybrid density functional theory versus many-body perturbation theory

Single photon detector and associated methods for making the same

Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction Devices

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack

Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations

Microcavity for optical telecommunication device, comprises two bragg reflectors separated by at least one semiconductor layer.

Synchrotron light in semiconductor research: Three decades of revolution

Electronic structure at realistic Si(100)-SiO2 interfaces

Semiconductor device

Ab initio study of interface states at metal contacts to III-IV semiconductors