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This paper presents a recently introduced switching principle for emerging monolithic bidirectional devices. Based on the hypothesis that those switches may overcome conventional diode type solutions in power converters, an active self-switching process be ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
In this paper we analyse a new type of silicon strain sensor based on the piezo- tunneling effect in a silicon lateral backward diode. The implantation profiles of the junction have been optimised to obtain a prevailing tunneling current at the reverse bia ...
A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...
The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...
We have fabricated a type of unique single-walled carbon nanotube field-effect transistor, in which the channel length is only 90 nm and aluminum and gold are used as its drain and source electrodes, respectively. The channel conductance oscillations cause ...
We investigated the I-V characteristics of the double barrier stair-well structure. Resonant tunneling current is achieved by application of an electric field, which increases the transmission under positive bias and decreases it under the reverse bias. Th ...
This paper describes some techniques to improve the output waveform quality of multilevel inverts fed-indction machines. The investigated topologies are the diode-clamped and series-connection of H-bridges. Thesetechinques are based on an unequal dc-voltag ...
We report direct evidence of enhanced spontaneous emission in a photonic-crystal (PhC) light-emitting diode. The device consists of p-i-n heterojunction embedded in a suspended membrane, comprising a layer of self-assembled quantum dots. Current is injecte ...
we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light. M ...