Near-field autocorrelation spectroscopy of disordered semiconductor quantum wells
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Background: Cannabis use and cannabis use disorder (CUD) are associated with mental health disorders, however the extent of this matter among pregnant and recently postpartum (e.g., new moms) women in the US is un-known. Associations between cannabis use, ...
This thesis uses femtosecond laser spectroscopy in studying strong correlation in condensed matters that are pertinent to future technology: a wide bandgap perovskite and a quantum material, with the employment of ultrafast time-resolved spectroscopy in th ...
A detailed investigation and characterization of the local properties of individual nanoscopic structures is of great importance for the understanding of novel physical phenomena at the nanoscale as well as for the assessment of their possible use in futur ...
Semiconductor quantum wires (QWRs) and quantum dots (QDs) are nanoscale heterostructures, which form fascinating low-dimensional systems for fundamental studies of quantum-mechanical effects and are attractive candidates for integration into optoelectronic ...
Carrier transport and capture paths via barriers of different dimensionality in AlGaAs/GaAs quantum wire (QWR)/quantum dot (QD) heterostructures, grown in inverted pyramids, are studied by photoluminescence (PL) spectroscopy. Evidence for thermally activat ...
The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...
In a coupled quantum-dot–nanocavity system, the photoluminescence from an off-resonance cavity mode exhibits strong quantum correlations with the quantum-dot transitions, even though its autocorrelation function is classical. Using new pump-power dependent ...
Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...
The growth mechanism of silicon nanocrystals (Si NCs) synthesized at a high rate by means of expanding thermal plasma chemical vapor deposition technique are studied in this letter. A bimodal Gaussian size distribution is revealed from the high-resolution ...