Electronic structure at realistic Si(100)-SiO2 interfaces
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We discuss the structural, electronic and dielectric properties of a model structure of the Si(100)-SiO2 interface that accounts for the amorphous nature of the oxide. After showing that the structural properties of this model are consistent with a variety ...
We investigate the equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon. Through the use of a first-principles approach, we map the profile of the local permittivity across two interface models showing different suboxid ...
The hydrogen response of gas-sensitive field-effect devices is mainly due to trapping of atomic hydrogen on the insulator side of the metal-insulator interface of the metal-insulator-semiconductor (MIS) structure. Therefore an influence of the choice of in ...
We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of rep ...
We study the electronic structure and the dielectric permittivity of ultrathin oxide layers on Si(I 00) substrates. By considering two different Si(l 00)-SiO2 interface models, we first show that the electronic structure in the interfacial oxide differs fr ...
A semiconductor device such as a DRAM memory device is disclosed. A substrate 12 of semiconductor material is provided with energy band modifying means in the form of a box region 38 and is covered by an insulating layer 14. A semiconductor layer 16 has so ...
We review the structural and hyperfine properties of Si dangling bond defects occurring in amorphous SiO2 and at various Si-SiO2 interfaces. These defects have in common a singly occupied orbital on a, trivalent Si Centre. We first briefly summarize the mo ...
We discuss the spectral signatures of strong electronic correlations and electron-phonon interactions in two representative low-dimensional systems. In the 2D compound 1T-TaSe2 a charge-density-wave (CDW) induces a narrowing of the conduction band, which t ...
The device has a semiconductor layer provided on an insulating layer and including source and drain (18,20) regions to define a body (22) region of respective field effect transistors. An energy band modifying unit modifies the valence and conduction band ...
We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increa ...
