Ion scattering simulations of the Si(100)-SiO2 interface
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Increasing the efficiency of crystalline silicon (c-Si) solar cells requires the reduction of both bulk and interface recombination. Even if bulk recombination is almost suppressed, the symmetry of the crystal lattice is disturbed at the surface and hence, ...
Zinc oxide (ZnO) is now often used as a transparent conductive oxide for contacts in thin-film silicon solar cells. This paper presents a study of ZnO material deposited by the low-pressure chemical vapour deposition technique, in a pressure range below th ...
In the frame of this thesis, two similar high current DC arc (HCDCA) plasma sources were investigated in a low gas pressure regime (10-3-10-2 mbar). One of them was initially designed for the epitaxial growth of silicon and silicon germanium (LEP), the oth ...
Zinc oxide (ZnO) is a material that belongs to the family of Transparent Conductives Oxides (TCO). Its non-toxicity and the abundant availability in the Earth's crust of its components make it an ideal candidate as electrical transparent contact for thin-f ...
The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...
Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 ...
Properties of thin films such as the crystallinity of silicon deposited from SiH4 - H-2 discharges are governed by the plasma composition. Therefore, it is crucial to measure the plasma composition in order to understand and optimize the deposition rate, d ...
We construct atomistic models of the Si(100)-SiO2 interface in accord with available experimental data. Combining classical and first-principles simulation methods, we generate transition structures from crystalline silicon to disordered SiO2. The generati ...
The optical absorption coefficient of amorphous and microcrystalline silicon was determined in a spectral range 400-3100 nm and a temperature range 77-350 K. Transmittance measurement and Fourier transform photocurrent spectroscopy were used. The measured ...
During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to future thin-film silicon solar cell processing and design: (1) In 1987, IMT introduced the so-called "very high frequency glow discharge (VHF-GD) ...