Nicolas Grandjean, Jean-François Carlin, Marcus Gonschorek
Gate and drain-lag effects are studied in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs grown on sapphire. Electron trapping on the surface states between the gate and the drain forming the net negative charge up-to similar to 2 x 10(13) cm(-2) is found to be re ...
2007