Optimization of Nanoelectronic Systems Reliability under Massive Defect Density Using Distributed R-Fold Modular Redundancy
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Undoped hydrogenated amorphous silicon layers deposited at different values of very high frequency (VHF) powers and silane to hydrogen dilution ratios possess various types of microstructures. Transport and defect measurements on layers suggest that struct ...
The aim of this research project is to study the deposition of thermal atoms and small ionised clusters on well defined surfaces. For this, an installation has been developed at the Institut de Physique Expérimentale to produce mass selected ionic metal cl ...
The mechanism of silicon diffusion in GaAs, Al0.3Ga0.7As, and the silicon diffusion-induced layer disordering of multiquantum wells have been studied by photoluminescence, secondary-ion-mass spectroscopy, and transmission electron microscopy across a corne ...
Laser induced defects in (Al,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM ...
Many potential applications in nanotechnology require virtually defect-free arrays of nanometre-scale particles over large areas. Guided self-assembly of colloidal particles on patterned templates has been shown to produce ordered arrays of colloidal parti ...
We investigated the effects of disorder in Bi2Sr2CaCu2O8+x high temperature superconductor. We found that small defect densities already suppress the characteristic spectral signature of the superconducting state. The spectral line shape clearly reflects n ...