Piezoelectric materials parameters for piezoelectric thin films in GHz applications
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The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
Thin film piezoelectric materials offer a number of advantages in microelectromechanical systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors wit ...
PbZrxTi1-xO3 (x=0.45) and PbxCa1-xTiO3 (PCT) (x=0.75) porous thin films were deposited on platinized silicon wafers by chemical solution deposition route using a polymer as a volatile phase. The introduction of pores creates a matrix-void composite resulti ...
Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
The dynamic piezoelectric response of SrBi4Ti4O15 ceramics with Aurivillius structure was investigated at high alternating stress, low frequencies (0.01 to 100 Hz), and temperatures from 20 to 200 degreesC. The piezoelectric nonlinearity, observed only at ...
Fabrication and characterization of ZnO thin film piezoelectric sensors on a polyimide membrane is presented in this paper. As a test device a differential pressure liquid flow sensor has been fabricated. We discuss new material combinations for the fabric ...
Lead oxide based ferroelectrics, represented by lead zirconate titanate (Pb(Zr,Ti)O-3) or PZT) are the most widely used materials for piezoelectric actuators, sensors and transducers due to their excellent piezoelectric properties. Considering lead toxicit ...
The dynamic piezoelectric response of SrBi4Ti4O15 ceramics with Aurivillius structure was investigated at high alternating stress, low frequencies (0.01 to 100 Hz), and temperatures from 20 to 200 degreesC. The piezoelectric nonlinearity, observed only at ...
Aluminum nitride thin films have been grown by reactive magnetron sputter technique using a pulsed power supply. The highly (002)-textured columnar films deposited on platinized silicon substrates exhibited quasi-single-crystal piezoelectric properties. Th ...
The effective piezoelectric coefficient e(31) has been measured on sol-gel processed Pb(ZrxTi1-x)O-3 thin films with Zr concentrations ranging from 45 to 60%. The largest value was observed at 45% Zr, although dielectric constant and effective d(33) peak a ...
