Publication
Modeling study of capacitance and gate current in strained High–K Metal gate technology: impact of Si/SiO2/HK interfacial layer and band structure model
Related publications (33)
Correlations and renormalization of the electron-phonon coupling in the honeycomb Hubbard ladder and superconductivity in polyacene
We have performed extensive density matrix renormalization group (DMRG) studies of the Hubbard model on a honeycomb ladder. The band structure (with Hubbard U = 0) exhibits an unusual quadratic band touching at half-filling, which is associated with a quan ...
Amer Physical Soc2013Temperature-dependent electron-phonon coupling in La_{2−x}Sr_{x}CuO_{4} probed by femtosecond x-ray diffraction
Majed Chergui, Henrik Moodysson Rønnow, Fabrizio Carbone, Paul Beaud, Krunoslav Prsa, Giulia Fulvia Mancini, Mathieu Julien Gino Cottet, Kazimierz Conder
The strength of the electron-phonon coupling parameter and its evolution throughout a solid's phase diagram often determines phenomena such as superconductivity, charge- and spin-density waves. Its experimental determination relies on the ability to distin ...
Amer Physical Soc2013Electronic and Structural Properties of the Ge/GeO2 Interface through Hybrid Functionals
The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic ...
EPFL2012Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case
Alfredo Pasquarello, Audrius Alkauskas
Calculations of formation energies and charge transition levels of defects routinely rely on density functional theory (DFT) for describing the electronic structure. Since bulk band gaps of semiconductors and insulators are not well described in semilocal ...
2011Band structure scenario for the giant spin-orbit splitting observed at the Bi/Si(111) interface
Marco Grioni, Emmanouil Frantzeskakis
The Bi/Si(111) (root 3 x root 3)R30 degrees trimer phase offers a prime example of a giant spin-orbit splitting of the electronic states at the interface with a semiconducting substrate. We have performed a detailed angle-resolved photoemission spectroscop ...
2010Spin-orbit coupling effects in the band structure of surface alloys
At the surface of a solid, quantum mechanics allows the existence of two-dimensional Bloch waves as solutions of the Schrödinger equation. These "surface" states are interesting both for fundamental and practical reasons, and have been extensively explored ...
EPFL2009Electronic Structure and Transport Properties of Ternary Skutterudite: CoX(3/2)Y(3/2)
Nicola Marzari, Boris Kozinsky
Electronic properties of ternary skutterudites AX(3/2)Y(3/2) (A=Co, X=Ge, Sn and Y=S, Te) are investigated using first principles calculations to clarify recent experimental results. Band derivatives are computed accurately within an approach based on Maxi ...
Materials Research Society2009Fermi surface determination from wavevector quantization in LaSrCuO films
Davor Pavuna, Claudia Cancellieri, Ping-Hui Lin
We have observed the wavevector quantization in LaSrCuO films thinner than 12 unit cells grown on SrTiO3 substrates. Low energy dispersions were determined in situ for different photon energies by angle resolved photoemission spectroscopy. From the wavevec ...
2008The growth by laser ablation and electronic properties of thin cuprate films
In my thesis work I have concentrated on the growth and the in-depth analysis of high temperature superconducting thin films with the central aim to elucidate their electronic properties, predominantly by in-situ angle resolved photoemission spectroscopy ( ...
EPFL2008Internal photoemission in solar blind AlGaN Schottky barrier photodiodes
Nicolas Grandjean, Mauro Mosca
We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increa ...
2005