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In this paper, we study the localized deposition of ZnO micro and nanostructures deposited by non-reactive rf-magnetron sputtering through a stencil mask on ultra-thin (10 nm) SiO2 layers containing a single plane of silicon nanocrystals (NCs), synthetized ...
In the present work, we apply a 2D self consistent model of SiH4/H2 discharges in order to investigate the transition from microcrystalline to amorphous silicon growth. The model is used to examine the relative importance of ions and atomic hydrogen in the ...
Al2O3 films are grown by atomic layer deposition (ALD) using trimethylaluminum and water as precursors on HF-last and NH3 plasma pretreatment Si substrates. The thickness, surface roughness, and density of Al2O3 films as well as the nature of their interla ...
The constant energy consumption and world-wide demography expansion add to the potential risks of ecological and human disaster associated with global warming. This makes it a necessity to develop renewable energy technologies such as photovoltaic energy. ...
Production volume of PV modules increases at > 35% per year, but one is yet far from making a global impact on energy supply. One of the obstacles is given by the present high production costs of PV modules. A possibility to reduce costs are thin-film PV m ...
Nanocomposite thin films exhibit interesting optical properties which differ from those of the pure constituents. Effective medium theories are used to model the dielectric function of the nanocomposite materials. We give an introduction to the theories of ...
During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interfacial layer (IL) containing SiOx between high-k dielectric and Si substrate is almost unavoidable. However, an Al(CH3)(3) (TMA) pretreatment for 3600 s on H ...
Thick film deposition of conductive, dielectric and resistive pastes on ceramic membranes is a cost effective technique to manufacture piezoresistive pressure sensors. Thick-film resistors consist of a percolating network of conductive oxide nanoparticles ...
The growth of ruthenium (Ru) nanocrystals on the SiO2 and Al2O3 films has been investigated using atomic layer deposition (ALD) method, indicating that much higher density Ru nanocrystals are grown on the Al2O3 film compared with the SiO2 film. Ru nanocrys ...
Properties of thin films such as the crystallinity of silicon deposited from SiH4 - H-2 discharges are governed by the plasma composition. Therefore, it is crucial to measure the plasma composition in order to understand and optimize the deposition rate, d ...