Free-electron laserA free-electron laser (FEL) is a (fourth generation) light source producing extremely brilliant and short pulses of radiation. An FEL functions and behaves in many ways like a laser, but instead of using stimulated emission from atomic or molecular excitations, it employs relativistic electrons as a gain medium. Radiation is generated by a bunch of electrons passing through a magnetic structure (called undulator or wiggler).
Population inversionIn physics, specifically statistical mechanics, a population inversion occurs while a system (such as a group of atoms or molecules) exists in a state in which more members of the system are in higher, excited states than in lower, unexcited energy states. It is called an "inversion" because in many familiar and commonly encountered physical systems, this is not possible. This concept is of fundamental importance in laser science because the production of a population inversion is a necessary step in the workings of a standard laser.
Electrical connectorComponents of an electrical circuit are electrically connected if an electric current can run between them through an electrical conductor. An electrical connector is an electromechanical device used to create an electrical connection between parts of an electrical circuit, or between different electrical circuits, thereby joining them into a larger circuit. Most electrical connectors have a gender - i.e. the male component, called a plug, connects to the female component, or socket.
Focused ion beamFocused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM). However, while the SEM uses a focused beam of electrons to image the sample in the chamber, a FIB setup uses a focused beam of ions instead.
Light-emitting diodeA light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device.
Refractive indexIn optics, the refractive index (or refraction index) of an optical medium is a dimensionless number that gives the indication of the light bending ability of that medium. The refractive index determines how much the path of light is bent, or refracted, when entering a material. This is described by Snell's law of refraction, n1 sin θ1 = n2 sin θ2, where θ1 and θ2 are the angle of incidence and angle of refraction, respectively, of a ray crossing the interface between two media with refractive indices n1 and n2.
MaserA maser (ˈmeɪzər; acronym of microwave amplification by stimulated emission of radiation) is a device that produces coherent electromagnetic waves (i.e. microwaves), through amplification by stimulated emission. The first maser was built by Charles H. Townes, James P. Gordon, and Herbert J. Zeiger at Columbia University in 1953. Townes, Nikolay Basov and Alexander Prokhorov were awarded the 1964 Nobel Prize in Physics for theoretical work leading to the maser.
Electrical resistivity and conductivityElectrical resistivity (also called volume resistivity or specific electrical resistance) is a fundamental specific property of a material that measures its electrical resistance or how strongly it resists electric current. A low resistivity indicates a material that readily allows electric current. Resistivity is commonly represented by the Greek letter ρ (rho). The SI unit of electrical resistivity is the ohm-metre (Ω⋅m).
Plasma accelerationPlasma acceleration is a technique for accelerating charged particles, such as electrons, positrons, and ions, using the electric field associated with electron plasma wave or other high-gradient plasma structures (like shock and sheath fields). The plasma acceleration structures are created either using ultra-short laser pulses or energetic particle beams that are matched to the plasma parameters. These techniques offer a way to build high performance particle accelerators of much smaller size than conventional devices.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
