Double-gate pentacene thin-film transistor with improved control in sub-threshold region
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This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...
The down-scaling of conventional MOSFETs has led to an impending power crisis, in which static power consumption is becoming too high. In order to improve the energy-efficiency of electronic circuits, small swing switches are interesting candidates to repl ...
Ambipolar transistors with on-line configurability to n-type and p-type polarity are desirable for future integrated circuits. Regular logic tiles have been recognized as an efficient layout fabric for ambipolar devices. In this work, we present a process/ ...
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
An important prerequisite for the design of digital integrated circuits is the ability to control the threshold voltage of the individual transistors during manufacturing. To address the problem of controlling the threshold voltage of low-voltage organic t ...
Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radi ...
The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...
The paper presents how the current leakage encountered in capacitive analog memories affects the learning process of hardware implemented Kohonen neural networks (KNN). MOS transistor leakage currents, which strongly depend on temperature, increase the net ...