Effect of Nb-donor and Fe-acceptor dopants in (Bi1/2Na1/2)TiO3–BaTiO3–(K0.5Na0.5)NbO3 lead-free piezoceramics
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GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...
The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...
Over the past 20 years, nanomaterials, such as quantum dots, nanoparticles, nanowires(NWs), nanotubes, and graphene, have received enormous attention due to their suitable properties for designing novel nanoscale biosensors. Nanomaterials are very small st ...
In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...
Ferroelectric oxides, such as lead zirconate titanate, have proved invaluable due to their excellent dielectric and piezoelectric properties. These classes of materials possess a large electric polarization below the Curie temperature. Regions of the cryst ...
We demonstrate the use of both pixelated differential phase contrast (DPC) scanning transmission electron microscopy (STEM) and off-axis electron holography (EH) for the measurement of electric fields and assess the advantages and limitations of each techn ...
"More with less" has been the motto behind the hardware miniaturization trend in the microelectronics industry since the 1970s. Active research in the growth of oxide films, including ferroelectrics, which started soon after, followed the same trend. Meanw ...
High-resolution powder x-ray diffraction and single-crystal neutron diffraction were used to investigate the crystal structure and magnetic ordering of the compound Pr1-xCax VO3 (0
The persisting demand of higher computing power and faster information processing keeps pushing scientists and engineers to explore novel materials and device structures. Within emerging functional materials, there is a focus on multiferroics materials and ...
As we advance into the era of nanotechnology, semiconductor devices are scaled down to their physical limits, thereby opening up venues for new transistor channel materials based on nanowires and nanotubes. Transistors based on nanowires and nanotubes inhe ...