EPFL Logo
fr|en
Login
Publication

IMPROVED GAINAS GAAS HETEROSTRUCTURES BY HIGH GROWTH-RATE MOLECULAR-BEAM EPITAXY

Nicolas Grandjean
1994
Journal paper
Abstract

This work shows that the critical thickness for the two-dimensional-three-dimensional growth mode transition during the growth of Ga0.65In0.35As on GaAs(001) can be significantly increased by increasing the growth rate. This experimental finding is corroborated by a Monte Carlo simulation of this heteroepitaxial growth. Improved quantum well optical properties are demonstrated.

Official source
About this result
This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Copyright © 2025 EPFL, all rights reserved

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.