Publication

Photoreflectance spectroscopy as a powerful tool for the investigation of GaN-AlGaN quantum well structures

Nicolas Grandjean
1999
Journal paper
Abstract

Room-temperature photoreflectance spectroscopy is performed on a series of GaN-AlGaN quantum wells grown by molecular beam epitaxy. We show that the potentialities of this powerful investigation method previously demonstrated to many low-dimensional systems can be extended to nitride-based quantum wells for accurate large scale characterisation. In particular, this technique allows us to get rid of optical interferences that usually prevent the observation of free-exciton transitions below the band-gap of GaN. Such transitions occur in wide quantum wells, because of large built-in electric fields which also quench the oscillator strength of the transitions. Also, this technique allows us to magnify the features of confined excited states, which are difficult to observe by standard reflectance. (C) 1999 Elsevier Science Ltd. All rights reserved.

About this result
This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.