GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range
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For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...
Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and metal organic vapour phase epitaxy. In both cases, the emission wavelength and the peak width agree ...
Novel light-emitting devices and micro-optical-circuit elements will rely upon understanding and control of light-matter interaction at the nanoscale. Recent advances in nanofabrication and micro-processing make it possible to develop integrable solid-stat ...
Semiconductor quantum dots are usually compared to artificial atoms, because their electronic structure consists of discrete energy levels as for natural atoms. These artificial systems are integrated in solid materials and can be localized with a spatial ...
We demonstrate that the presence of charges around a semiconductor quantum dot (QD) strongly affects its optical properties and produces nonresonant coupling to the modes of a microcavity. We show that, besides (multi)exciton lines, a QD generates a spectr ...
A detailed investigation and characterization of the local properties of individual nanoscopic structures is of great importance for the understanding of novel physical phenomena at the nanoscale as well as for the assessment of their possible use in futur ...
Over the past few decades, III-V nitrides have attracted much attention due to the possibility to realize high efficiency optoelectronic devices covering all the UV and visible part of the light spectrum. However, the device fabrication has gone much faste ...
We report on the dependence on temperature of the homogeneous and inhomogeneous broadening of the fundamental transition of single polar GaN/AlN quantum dots (QDs). Stranski-Krastanov QDs have been grown by molecular beam epitaxy using NH3 as a nitrogen so ...
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Exciton transfer between two parallel GaAs V-groove quantum wires (QWRs) or two planar quantum wells (QWs) separated by AlGaAs barriers ranging from 5.5 nm to 20 nm thickness is studied by photoluminescence (PL) and PL excitation (PLE) spectroscopy. It is ...
We develop a theoretical formalism to model the linear spectrum of a quantum dot embedded in a high-quality cavity, in the presence of an arbitrary mechanism modifying the homogeneous spectrum of the quantum dot. Within the simple assumption of Lorentzian ...