Publication
Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum
Related publications (35)
Physics and applications of intersubband transitions in nitride based heterostructures
In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...
EPFL20080D microcavity polaritons
Polaritons are half-matter half-light quasiparticles, arising, in a two-dimensional semiconductor microcavity, from the strong-coupling between an exciton (an elementary electronic excitation of a crystal) and a photon. This thesis presents the fabrication ...
EPFL2007Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Gabriel Christmann
GaN/AlGaN and InGaN/GaN quantum wells (QWs) are investigated as the active region for room-temperature strong exciton-photon coupling in high-quality AlInN/(Al)GaN microcavities (MCs). Angular resolved photoluminescence (PL) measurements performed on an Al ...
2006Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots
We analyze the low temperature photoluminescence properties of two multi-layer stacking of GaN/AlN quantum dots. We report drastic differences of linewidths between continuous wave and time-resolved photoluminescence experiments. After the pulsed excitatio ...
2004Localization effects in GaN/AlGaN quantum well - Photoluminescence studies
Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emissi ...
2003Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments
We present a combined theoretical and experimental analysis to describe the interplay between polarization field, charge screening, and radiative and nonradiative recombinations in AlGaN/ GaN-based nanostructures. We perform the study of photoluminescence ...
2003Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
Al0.1Ga0.9N(5nm)/GaN(2nm) and In0.2Ga0.8N/GaN quantum wells (QWs) grown on GaN/sapphire have been studied by cathodoluminescence (CL) spectroscopy and imaged using an experimental setup especially developed for scanning near-field CL microscopy, which comb ...
2003Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells
Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dyn ...
2003Recombination dynamics in GaN/AlGaN quantum wells: The role of built-in fields
We present an experimental study of the dynamical screening effect of the built-in field in GaN-based quantum well structures by means of picosecond time-resolved luminescence measurements. Our results clearly show that the recombination dynamics of the ph ...
2001Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8 < T < 280 K). We investigate the influence of growing or not an AlGaN barrier on top of the active layer. We address the differences betw ...
2001