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We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
The modulation of the electronic structure of cobalt islands on Cu(111) by the Moire pattern of an Ag overlayer is investigated. Acquisition of tunneling spectroscopy maps reveals a local modification of both the energy and the amplitude of the cobalt-rela ...
Periodic polarity (PePo) GaN films are grown by molecular-beam epitaxy. A high Mg doping is used to reverse the film polarity from Ga to N. An etching step is then performed to define the PePo pattern. Ultrasharp inversion domain boundaries between Ga- and ...
Wurtzite GaN/AlN quantum dots (QDs) are studied by time-resolved photoluminescence. Careful measurements allow us to reach the regime of a single electron-hole pair per dot, evidenced by a monoexponential decay of the luminescence and a stop of the time-de ...
The acceleration of electrons during a sawtooth crash is demonstrated in various regimes of the TCV tokamak plasma. Simultaneous measurements of electron cyclotron emission from the low field side and from the high field side of the tokamak provide informa ...
This thesis work contains an experimental study of many-body and cooperative effects in quantum wells. Many-body effects prove important for an understanding of the physical and specifically optical properties of semiconductors. The Coulomb interaction bet ...
Irradiation induces the formation of stacking fault tetrahedra (SFTs) in a number of fcc metals, such as stainless steel and pure copper. In order to understand the role of the material's parameters on this formation, pure Cu, Ni, Pd and Al, having a respe ...
GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...
We present the results of high magnetic field (up to 30 T) and temperature (50 mK-80 K) dependent transport measurements on a 2DEG in GaN/AlGaN heterojunctions. A high mobility (above 60000 cm(2) V-1 s(-1) at 4 K) 2DEG was obtained by MBE growth of disloca ...
The growth of InGaN quantum wells ( QWs) by metal-organic vapour phase epitaxy is investigated by atomic force microscopy ( AFM). It is shown that for low growth temperatures the surface morphology of the thin InGaN well layer ( 1.5 nm) exhibits a meanderi ...