Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation
Related publications (33)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Electric-field-induced phase transitions have been evidenced by macroscopic strain measurements at temperatures between 25 degrees C and 100 degrees C in 001-poled (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) [(PMN-xPT);x=0.25,0.305,0.31] and (1-x)Pb(Zn1/3Nb2/3)O ...
Based on the results of field-dependent dielectric and magnetic measurements, we observe several interesting behaviors and phase transitions in this geometrically frustrated spinel system CdCr2S4. (1) A glassy dipolar state occurs near T-C similar to 85 K, ...
In this paper we present and discuss measurements of electric (vertical and radial) and magnetic fields from leaders and return strokes associated with lightning strikes to the 100 m tall Gaisberg tower in Austria obtained in 2007 and 2008. The fields were ...
Alginate gel formation on-chip is presented in the first part of this thesis. The technique allows immobilization, and release, of biological cells on-chip. Furthermore, via layer by layer deposition, a locally heterogeneous environment can be generated at ...
Piezoelectric effects on the optical properties of GaN/AlN quantum dots have been investigated by both continuous-wave and time-resolved photoluminescence (TRPL) measurements. The increase in excitation density in CW-PL leads to a blue shift of the transit ...
The internal electric field in multilayer organic light-emitting diodes (OLEDs) is investigated using a combination of experimental measurement and numerical device modeling. This approach results in a detailed understanding of the functioning of a multila ...
The magneto-luminescence of GaN/AlGaN quantum wells in fields up to 52 T shows a field dependence that is strongly dependent on the well width. Strong redshifts are seen for the narrowest wells that are attributed to a Zeeman splitting. This is unexpected, ...
Models of amorphous (HfO2)x(SiO2)(1), for varying hafnium, content x are generated by ab initio molecular dynamics. The structural properties are analyzed in terms of pair distribution functions from which typical bond lengths and coordination numbers are ...
We analyze the low-temperature photoluminescence decay times, for a series of MBE-grown samples embedding GaN-AlGaN quantum wells. We investigate a variety of configurations in terms of well widths, barrier widths and overall strain states. We find that no ...
Time-resolved photoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from similar to5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and ...