Room-temperature polariton luminescence from a bulk GaN microcavity
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We report the optical properties of high quality V-groove GaAs/Al0.3Ga0.7.As quantum wires (QWRs) with different thicknesses of the GaAs layer. The systematic investigation of photoluminescence (PL) and photoluminescence excitation (PLE) spectra as a funct ...
Lifetime studies of the NO A2S+ (v = 0) Rydberg fluorescence in rare gas matrixes are reported. The fluorescence stems from two types of sites, red and main. The red site fluorescence shows a lifetime lengthening of 25% in Kr matrixes and 100% in Xe matrix ...
We succeeded in observing the two-photon absorption of germanium for both the direct and the indirect gaps, using the Vanderbilt free-electron laser. The two-photon absorption for the indirect gap was found to be 3 orders of magnitude smaller than the dire ...
Band offsets of 0.35-0.45 eV are produced at Ge homojunctions by placing a monolayer of As and an adjacent monolayer of Ga between the two Ge bulks. The "Ga-first" and "As-first" growth sequences exhibit band offsets of similar magnitude but opposite sign, ...
Previous studies of cyanide exchange on square planar tetracyanoplatinate complex [Pt(CN)4]2- have been undertaken only at a high pH. For a more complete fundamental understanding of this system we extended the investigations of these exchanges over a larg ...
A quantum theory of quantum well polaritons in semiconductor microcavities is developed. The model takes into account the coupling between the exciton level and the structured continuum of electromagnetic modes relative to the particular geometry of the mi ...
Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum rela ...
