Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors
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Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
The down-scaling of conventional MOSFETs has led to an impending power crisis, in which static power consumption is becoming too high. In order to improve the energy-efficiency of electronic circuits, small swing switches are interesting candidates to repl ...
We extend ambipolar silicon nanowire transistors by using three independent gates and show an efficient approach to implement dual-threshold-voltage configurable circuits. Polarity and threshold voltage of uncommitted devices are determined by applying dif ...
An in situ annealing stage has been developed in-house and integrated in the chamber of a Scanning Electron Microscope equipped with an Electron BackScattered Diffraction system. Based on the Joule effect, this device can reach the temperature of 1200°C at ...
This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...
Nowadays the orientation maps of polycrystalline material are necessary for a better understanding of, for example, the formation of voids in the interconnects of modern electronic devices. As new generation of devices has dramatically reduced in size, new ...
Titanium aluminium nitride (TiAlN)-based coatings are designed specially for applications where oxidation and wear resistance are primary demands, as in the case of cutting tools. Moreover the coatings are required to be thermally stable as well as have go ...
This work presents a study of XRD measurements on the development of the (113) preferential orientation with film thickness for Ti0.67Al0.33N films grown on Si(100) substrates by pulsed DC magnetron sputtering. The buildup of (113) texture was observed usi ...
We present enhancement-mode GaN high electron mobility transistors on Si substrates with ZrO2 gate dielectrics of thicknesses t(ox) between 10 and 24 nm. The oxide interlayers between the InAlN/AlN barrier and gate metal allow raising the device threshold ...