We report on the first observation of both confined optical phonons and interface phonons in a single strained InAs quantum well grown on InP. Quasi resonant Raman measurements allow for the observation of interface modes. Informations about the mismatch induced strain in the InAs layer are obtained. The effect of the strain and the confinement on the longitudinal and transverse optical InAs modes are estimated.
Véronique Michaud, Vincent Werlen, Christian Rytka
Philip Johannes Walter Moll, Maja Deborah Bachmann, Matthias Carsten Putzke, Chunyu Guo, Maarten Ruud van Delft, Joshua Alan Wolfe Straquadine