A thin InAs layer grown in a quasi-two-dimensional film over InP reorganizes into islands if left to anneal under arsine. This surface transformation is inhibited at lower arsine fluxes. With increasing temperature, the surface transformation is activated as long as the effective arsine coverage is sufficient.
Pierluigi Bruzzone, Kamil Sedlák, Nikolay Bykovskiy, Ortensia Dicuonzo
Ursula Röthlisberger, Ariadni Boziki, Mohammad Ibrahim Dar, Gwénolé Jean Jacopin
Michael Graetzel, Jovana Milic, Yang Li, Algirdas Ducinskas