100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...
GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until rec ...
As we advance into the era of nanotechnology, semiconductor devices are scaled down to their physical limits, thereby opening up venues for new transistor channel materials based on nanowires and nanotubes. Transistors based on nanowires and nanotubes inhe ...
Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...
We report the characterization of GaN high electron mobility transistors (HEMTs) using a new AlN-capped AlInN/GaN epilayer structure developed to achieve high current densities and reduced gate leakage currents. Devices with gate lengths of 75 and 200 nm a ...
Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...
GaN-based heterostructures, and here, particularly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact schemes, HEMT devices have been fabricated allowing high-temperature 1-M ...
This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...
The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
