Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure
Related publications (32)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
CuO2SeO3 is an insulating material that hosts topologically nontrivial spin whirls, so-called skyrmions, and exhibits magnetoelectric coupling allowing to manipulate these skyrmions by means of electric fields. We report magnetic force microscopy imaging o ...
In this thesis, angular resolved photoemission spectroscopy (ARPES) is used to study the electronic structure of different two-dimensional electron systems (2DES). This technique is very surface sensitive and the most direct method to probe the surface ban ...
Ferroelectric materials, upon electric field biasing, display polarization discontinuities known as Barkhausen jumps, a subclass of a more general phenomenon known as crackling noise. Herein, we follow at the nanoscale the motion of 90 degree needle domain ...
Torque magnetometry at low temperature and in high magnetic fields B is performed on MgZnO/ZnO heterostructures incorporating high-mobility two-dimensional electron systems. We find a sawtoothlike quantum oscillatory magnetization M(B), i.e., the de Haas-v ...
Neutron diffraction with static and pulsed magnetic fields is used to directly probe the magnetic structures in LiNiPO4 up to 25 T and 42 T, respectively. By combining these results with magnetometry and electric polarization measurements under pulsed fiel ...
Two-dimensional electron gases (2DEGs) forming at the interfaces of transition metal oxides(1-3) exhibit a range of properties, including tunable insulator-superconductor-metal transitions(4-6), large magnetoresistance(7), coexisting ferromagnetism and sup ...
We demonstrate the use of both pixelated differential phase contrast (DPC) scanning transmission electron microscopy (STEM) and off-axis electron holography (EH) for the measurement of electric fields and assess the advantages and limitations of each techn ...
We present a methodology to quantify polarization and electron affinity changes at interfaces by combining scanning tunneling spectroscopy, off-axis electron holography in transmission electron microscopy (TEM), and self-consistent calculations of the elec ...
Unprecedented and fascinating phenomena have been recently observed at oxide interfaces between centrosymmetric cubic materials, where polar discontinuities can give rise to polarization charges and electric fields that drive a metal-insulator transition a ...
We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm(2) /V s) and low sheet resistivity (356 O ...