Publication

3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu
2010
Journal paper

Abstract

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of output power at the fundamental wavelength of 1.3 mu m represents the best achievement reported to date for this type of lasers. (C) 2010 Optical Society of America

Official source

https://infoscience.epfl.ch/record/152979?ln=en

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3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

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