Couche épaisse de nitrure de Gallium ou de nitrure mixte de Gallium et d'un autre métal, procédé de préparation, et dispositif électronique ou optoélectronique comprenant une telle couche
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When silicon thin films are deposited by plasma enhanced chemical vapour deposition in a plasma regime close to that of the formation of powder, a new type of material, called polymorphous silicon (pm-Si), is obtained. We present here the optoelectronic an ...
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Only Popovici et al. [1] have published the results of a Raman study on p type GaN. In the present communication, we report on the interaction of the free hole ...
