Lattice dynamics and dielectric response of undoped, soft and hard PbZr0.42Ti0.58O3

In this study, ceramic samples of lead zirconate titanate Pb(Zr0.42Ti0.58)O3 (PZT 42/58) doped with Fe (hard) and Nb (soft) were studied by Raman, infrared (IR) and THz spectroscopy in the temperature range from 900 to 20 K. From the evaluation of the IR and Raman phonons in undoped ceramics, we conclude that tetragonal PZT ceramics undergo a low-temperature phase transition to a tilted phase, revealed by anomalies in phonon parameters and the appearance of new modes. Doped samples also presented similar behaviour. The main differences between undoped and doped ceramics lie in the dielectric behaviour below phonon frequency range, where several mechanisms appear: a soft central mode (CM) located near 1 THz and two relaxations in the GHz range. Both types of doping raise the permittivity values below the phonon frequencies, not only increasing the dielectric contribution of the CM, but also modifying the dielectric response near the GHz range. Soft ceramics show higher permittivity with logarithmic increase at low frequencies, corresponding to an almost frequency-independent value of the dielectric losses below 0.1 GHz.

Conductivity, dielectric and piezoelectric properties of SrBi4Ti4O15

Strontium Bismuth Titanate is a very promising material for high temperature piezoelectric applications, its elevated ferroelectric phase transition (530°C), linear piezoelectric properties under low field and relatively low room temperature conductivity (compared to others Bismuth Titanates) make it very attractive for precision sensors. However, under severe conditions (low frequency, high field, high temperature or low oxygen partial pressure) some of those advantages disappear. Piezoelectric response is dominated by charge drift in general becomes unstable. Above all, at high temperature and low oxygen partial pressure, a large conductivity increase reduces the piezoelectric efficiency of the material, in this work, electrical conductivity, piezoelectric properties and dielectric permittivity of SrBIT ceramic have been investigated in conditions of high temperature, low oxygen partial pressure, low to moderate driving field and frequency. As a result of this research, a better understanding of SrBIT properties was achieved. Thanks to a careful study of SrBIT processing as a bulk ceramic, a reproducible route was established. Many basic mechanisms leading to both SrBIT crystallization and sintering have been identified. It was demonstrated that a detailed knowledge of the exact processing conditions is required in order to achieve high quality material. DC conductivity measurements were carried out as a function of temperature, oxygen partial pressure and dopant concentration. It was found that the apparent activation energy for conduction for undoped SrBIT was 1 eV between 140 and 220°C and 1.5 eV between 450 and 700°C. Decrease of the activation energy in the lower temperature range has been discussed considering grain boundary conductivity, as a transition from electronic to ionic conduction or as consequence of small polarons conduction. It was shown that lower activation energy resulted from Manganese doping (0.5 eV), this was interpreted as either growing influence of grain boundary conductivity as dopant concentration increases or as shallow hole trap formation. DC conductivity measurements and acceptor/donor doping experiments demonstrated p-type conductivity in the low temperature range (up to 220°C) as donor doping decreases conductivity, while oxygen partial pressure controlled measurements indicated n-type conductivity at higher temperature (above 700°C). An electrical impedance analysis was performed with several equivalent circuits. The aim of these models was to simulate the impedance of SrBIT. The best approximation was found with a distributed element of Havriliak-Negami type. However, as the physical justification for this circuit was not clear, the investigation of the grain, grain boundary and electrode impedances was performed with multiple discrete parallel RC elements. With temperature, grain size and oxygen activity variations, the identification of three separate contributions as grain, grain boundary and electrode was realized. The anisotropy of conductivity and permittivity was demonstrated with textured material and both DC and AC analysis. With the master curves built for the electrical modulus, it was found that the impedance probably related to Bismuth oxide layers produces an additional high frequency are. From this finding and by comparing characteristic relaxation frequencies of undoped, 2 mol.% Mn and 4 mol.% Nb SrBIT, it was determined that conductivity is higher in the ab plane direction than in the c direction within both perovskite units and Bismuth oxide layers. With conductivity measurements under controlled oxygen partial pressure, it was found that an acceptor-based (intrinsic or extrinsic) model could be used to describe the electrical conductivity under controlled oxygen partial pressure of both undoped and 2 mol.% Mn doped SrBIT. However, as neither a pO2-1/6 region (intrinsic oxygen vacancies compensated by electrons) for undoped SrBIT nor a pO2-1/4 region (oxygen vacancies compensated by singly ionized acceptors) for Mn doped SrBIT were seen, it was concluded that the acceptorcontrolled model is not sufficient for a complete description of SrBIT. For this reason and in order to include the low oxygen partial pressure behavior of undoped SrBIT, a donor-based (intrinsic) model was also considered. The source of intrinsic donors would be in that case Bi3+ cations sitting on Sr2+ sites in the perovskite sublattice. Considering Bismuth vacancies as the negative compensating species, both pO2-1/4 and pO2-independent regions could be predicted with the model. However, even if the donor-controlled model seems to better match conductivity measurements in the full PO2) range, rejecting the acceptor-based model would be an error. It is actually not demonstrated that in SrBIT the concentration of exchanged Bismuth cations is always (all temperature, pressure) larger than the natural acceptor impurity concentration. It is very likely that the cation exchange is dependent of the oxygen partial pressure. It is also not proved as suggested in the literature that direct compensation between exchanged Strontium and Bismuth exists, reducing the net donor-excess. With the acceptor-controlled model, the mass-action constants for reduction and for ionization of intrinsic carriers across the band gap were determined. The band gap of SrBIT was estimated to be 3.5 eV. The ionic conductivity of SrBIT was determined at high temperature with measurements under controlled oxygen partial pressure. It was found that the electrical conductivity of SrBIT is probably mixed (electronic and ionic) as the estimation of the transference number provided quite large values (t=0.8 at 800°C). From electronic and ionic conductivity data, mixed conduction can actually be predicted in a large temperature range (above room temperature). The piezoelectric measurements using direct effect demonstrated that it is actually possible to unlock piezoelectrically active ferroelectric domain walls and create non-linear piezoelectric properties in undoped SrBIT. This occurs above a threshold elastic field, which is thermally activated. With a piezoelectric composite, it was demonstrated that the electromechanical coupling between two different phases creates a piezoelectric relaxation. This one could be positive or negative depending on the respective properties of each composite's component. It was shown experimentally that a small temperature change is sufficient to transform a positive relaxation into a negative one. While these experiments did not provide a detailed microstructural explanation for the piezoelectric relaxation observed in 2 mol.% Mn doped SrBIT, they gave a first insight into an original phenomenological approach. Microstructure and piezoelectric properties were related with the calculation of a piezoelectric relaxation composite made of two textured samples. This demonstrated that a piezoelectric relaxation may occur just because of anisotropy. Microstructural reproduction of this coupling is actually an important feature of Aurivillius phases.

EPFL2000

Softening and hardening transitions in ferroelectric Pb(Zr,Ti)O3 ceramics

Hysteretic and nonlinear dielectric behaviour in ferroelectric ceramics has been of interest since 1950s, when these materials found application in various electronic devices. Presently, these phenomena concern with important areas of science, technology and engineering. In particular, nonlinearity and hysteresis are the key factors in performance, precision and accuracy of modern devices. Many theoretical and experimental studies have been aimed at understanding the origins of hysteresis and nonlinearity in ferroelectrics. Nowadays, there are several models that describe major contributions to nonlinearity and hysteresis on phenomenological, microscopical or statistical levels. These models have a limited area of applicability due to the complexity of physical processes occurring in real materials. Empirically, hysteresis and nonlinearity in ferroelectrics can be controlled by softening and hardening of the material. This is the case of most widely used ferroelectric, lead zirconate titanate (PZT). The soft compositions possess large electro-mechanical coefficients but also large hysteresis and nonlinearity while the opposite is true for the hard compositions. After fifty years since introduction of these materials, the mechanisms of softening and hardening remain poorly understood. The present study is aimed at a better understanding of the processes leading to hardening and softening of Pb(Zr,Ti)O3 ceramics in order to verify the key principles required for a more universal physical model of hysteresis and nonlinearity. Based on the present state of knowledge, such model should consider domain wall contribution to nonlinear and hysteretic polarization response and at the same time account for hardening and softening of the ferroelectric. For this purpose the well known lead zirconate titanate (PZT) ceramics doped with various concentrations of niobium (soft materials) or iron (hard materials) are chosen as a prototype of the ferroelectric system. The starting hypothesis of the thesis' approach is that the softening and hardening are a result of electrostatic arrangement of charged defects in the ceramic bulk: the hard materials are characterized by the ordered and the soft by disordered defects. The thesis then develops in detail the idea that hardening-softening transitions in a ferroelectric system may occur under the influence of (i) dopants, depending on their type and concentration, (ii) a cyclically applied electric field, (iii) a thermal treatment, and (iv) time. The transition from microscopic order to microscopic disorder is confirmed experimentally using carefully analyzed phenomenological parameters of the macroscopic hysteresis and nonlinearity. Among the nonlinear and hysteretic parameters characterizing the polarization response of a ferroelectric material, some (e.g., third harmonic of polarization) are shown to be particularly sensitive to the softness and hardness of ferroelectric system and thus may serve as the characteristics of ferroelectric hardening-softening transitions. Contribution of domain walls to hysteresis and nonlinearity is analyzed in terms of domain wall energy potential and degree of ordering of pinning centres. It is shown that two existing models characterizing hard (V-potential) and soft (random potential) materials are ideal, limiting cases and that some real materials are described by an intermediary case, which can evolve with time and under influence of external factors. The dielectric characterization performed at wide range of frequencies has revealed an increase of the apparent frequency dispersion of the dielectric permittivity with the transition from the hard to soft state in PZT ceramics. The investigation of dielectric response over a wide temperature range has revealed the profound presence of hopping conductivity in iron doped PZT ceramics below the Curie temperatures and its absence in niobium doped PZT ceramics. The role of hopping charged species in ferroelectric hardening – softening transitions is analyzed and discussed. The thesis is organized in the following way. A brief introduction (Chapter 1) and a literature review of the theoretical description of domain wall contribution to dielectric nonlinearity and hysteresis in ferroelectrics (Chapter 2) is followed by the thesis outline and discussion of a unified model of hysteresis and nonlinearity in ferroelectrics with ordered and disordered states of domain wall pinning centres (Chapter 3). Processing of ceramics is described in Chapter 4 and mathematical and experimental background for the dielectric spectroscopy study in Chapter 5. The results and discussion of detailed experimental studies of polarization response in ferroelectric PZT ceramics under subswitching and switching conditions are given in Chapters 6 and 7. The summary of the main results and conclusions are given in the last thesis section.

EPFL2005

Properties and phase transitions in lead free piezoelectrics

Naama Klein

Piezoelectric materials are used in a wide range of applications, with lead zirconate titanate (PZT) ceramics being the dominant family of materials, due to high piezoelectric coefficients, dielectric permittivity and coupling factors. The high properties have been found in compositions in the proximity of a morphotropic phase boundary (MPB). The MPB exhibits a weak temperature dependence so that the stability of the properties is attained over a large temperature range. However, environmental problems rising from the toxicity of lead have driven scientists around the world to search for lead free piezoelectric materials. These new materials should exhibit properties comparable to those of PZT and the efforts are at the present concentrated on solid solutions with an MPB. In this thesis an emphasis was made on constructing the phase diagrams and detecting an MPB in two of the most promising families of lead-free solid solutions: bismuth sodium titanate based and potassium sodium niobate based ceramics and single crystals. By investigating the structure of the phases, using X-ray and neutron diffractions and Raman spectroscopy, and measuring the dielectric and piezoelectric properties at temperatures from -266 °C to 550 °C, the phase transitions were assigned and phase diagrams constructed. Both systems (1-x)(Bi0.5Na0.5)TiO3-xBaTiO3 (0 ≤ x ≤ 0.09) (BNBT) and (1-x)(K0.5Na0.5)NbO3-xLiNbO3 (0.02 ≤ x ≤ 0.1) (KNLN), reveal similar MPBs to the one found for PZT. However, in PZT the MPB is pseudovertical up to about 350 °C whereas the MPB in BNBT is vertical only till 75 °C and in KNLN is till -50 °C. This difference in the temperature stability range is crucial in most applications. Other interesting findings in the BNBT phase diagram correspond to the phase sequence at the temperature range from 200 to 300 °C, where ferroelectric phase transforms into a mixed phase (antiferroelectric or paraelectric) with polar regions. As temperature rises, the polar regions gradually disappear. Whereas dielectric and piezoelectric properties of BNBT could compete with those of PZT in some compositions, and fairly simple processing of the ceramics is used, the fabrication of KNLN ceramics has shown to be complex and reproducible properties difficult to obtain. Even after the critical processing conditions were identified in this thesis, and reproducibility was achieved, properties were significantly lower than for PZT. Exceptional values of the thickness coupling coefficients were measured on potassium niobate (KN) and KNLN single crystals rotated away from the Z axis by θ = 45° about the orthorhombic Y axis, [001]C-cut. Monodomain and domain-engineered single crystals cut at this angle showed very high coefficients (kt ≤ 70%), which are extremely stable over a large temperature range and after thinning to thickness below 60 µm. Together with low permittivity, these properties make KN single crystals a good candidate for high-frequency applications. The higher permittivity of KNLN makes it an attractive crystal for applications at lower frequencies. Another possible application of lead free piezoelectrics could be in biological systems. For this reason, preliminary in-vitro biocompatibility study of KNLN and PZT ceramics was conducted, showing similar microscopic attachment of cells to the two ceramics and slightly lower viability values when compared to non coated tissue culture plates. Laboratory attempts to introduce KNLN ceramics as an implant in the mineral of the bone, hydroxyapatite (HA), ended with a strong chemical reaction between the two. However, some piezoelectric response could be measured from the composite of HA and KNLN.

EPFL2009