Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
Amorphous siliconAmorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic. Amorphous silicon cells generally feature low efficiency.
Wide-bandgap semiconductorWide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.
Power supply unit (computer)A power supply unit (PSU) converts mains AC to low-voltage regulated DC power for the internal components of a computer. Modern personal computers universally use switched-mode power supplies. Some power supplies have a manual switch for selecting input voltage, while others automatically adapt to the main voltage. Most modern desktop personal computer power supplies conform to the ATX specification, which includes form factor and voltage tolerances.
Semiconductor deviceA semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
Extremely high frequencyExtremely high frequency (EHF) is the International Telecommunication Union (ITU) designation for the band of radio frequencies in the electromagnetic spectrum from 30 to 300 gigahertz (GHz). It lies between the super high frequency band and the far infrared band, the lower part of which is the terahertz band. Radio waves in this band have wavelengths from ten to one millimetre, so it is also called the millimetre band and radiation in this band is called millimetre waves, sometimes abbreviated MMW or mmWave.
Silicon carbideSilicon carbide (SiC), also known as carborundum (ˌkɑrbəˈrʌndəm), is a hard chemical compound containing silicon and carbon. A semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests.
MicrowaveMicrowave is a form of electromagnetic radiation with wavelengths ranging from about 30 centimeters to one millimeter corresponding to frequencies between 1000 MHz and 300 GHz respectively. Different sources define different frequency ranges as microwaves; the above broad definition includes UHF, SHF and EHF (millimeter wave) bands. A more common definition in radio-frequency engineering is the range between 1 and 100 GHz (wavelengths between 0.3 m and 3 mm). In all cases, microwaves include the entire SHF band (3 to 30 GHz, or 10 to 1 cm) at minimum.
Silicon–germaniumSiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.
Radio waveRadio waves are a type of electromagnetic radiation with the longest wavelengths in the electromagnetic spectrum, typically with frequencies of 300 gigahertz (GHz) and below. At 300 GHz, the corresponding wavelength is 1mm, which is shorter than the diameter of a grain of rice. At 30 Hz the corresponding wavelength is ~, which is longer than the radius of the Earth. Wavelength of a radio wave is inversely proportional to its frequency, because its velocity is constant.
