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A review. Activation of otherwise inert bonds has significant potential in the design of efficient and synthetically useful transformations. While general catalytic carbon-carbon single bond activations are still in their infancy, this emerging area examin ...
A reproducible and robust techique of contacting GaAs/GaAlAs heterostructures using an evaporated AuGeNi alloy has been developed. The behavior of the electrical contacts to the two-dimensional electron gas has been studied in the quantum Hall regime. Cont ...
Institute of Electrical and Electronics Engineers1991
The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral mic ...
Schottky-barrier formation for Al on GaAs(110) was analyzed theoretically and with the aid of synchrotron-radiation photoemission experiments as a function of the metal coverage. For various Al-overlayer thicknesses we calculated the most stable geometries ...
A microwave-compatible lithography-free process is shown to allow the electrical contact of a single nanometric spin valve grown by template synthesis. The complex spin dynamics of a single nanomagnet is revealed by resonant microwave current excitations, ...
When planar graphene sheets are stacked on top of each other, the electronic structure of the system varies with the position of the subsequent sublattice atoms. Here, we employ scanning photocurrent microscopy to study the disparity in the behavior of cha ...
We report a modification by thin silicon nitride intralayers of the Au/n-GaAs)(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon-nitrogen mixture plasma. The nitridati ...
