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Integrated Hall Microsystem with Current Re-Use

Related publications (65)

Modal engineering of electromagnetic circuits to achieve rapid settling times

Inductive circuits and devices are ubiquitous and important design elements in many applications, such as magnetic drives, galvanometers, magnetic scanners, applying direct current (DC) magnetic fields to systems, radio frequency coils in nuclear magnetic ...

AIP Publishing2023

MeshUDF: Fast and Differentiable Meshing of Unsigned Distance Field Networks

Pascal Fua, Benoît Alain René Guillard, Federico Stella

Unsigned Distance Fields (UDFs) can be used to represent non-watertight surfaces. However, current approaches to converting them into explicit meshes tend to either be expensive or to degrade the accuracy. Here, we extend the marching cube algorithm to han ...

2022

Adaptive Body Biasing in Strong Body Factor Technologies

Thomas Christoph Müller

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

High-Current Low-Voltage Power Supply for Superconducting Magnets

Émilien Luc Henri Coulinge

In the wide range of applications for power supplies, the ones dedicated to feeding superconducting magnets occupy a niche. This particular kind of magnets has the intrinsic property of having zero resistance, and is only used in high-end facilities for fu ...

EPFL2020

Sample and Average Common-Mode Feedback in a 101 nW Acoustic Amplifier

Kyojin Choo

We present a Sample and Average Feedback Resistor (SAFR) for accurate and programmable common-mode feedback in capacitively coupled low-power amplifiers. Using only switches, clocks, and capacitors, we reduce the variation across process and temperature by ...

IEEE2020

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

2019

On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control

Elison de Nazareth Matioli, Armin Jafari

In this work, we present a new device concept for compact high-voltage sensing with high-impedance input port, consisting of an AlGaN/GaN high-electron-mobility channel controlled by trapped carriers generated by a metallic electrode. The high-voltage appl ...

2019

Design of an Energy-Efficient Current-to-Frequency Converter for a Wearable Sensor Platform

Maher Kayal, Evgenia Voulgari, François Krummenacher

This paper presents the design of the ANTIGONE ASIC in AMS 0.35 mu m technology that interfaces with ion-sensitive field effect transistors (ISFETs) to detect biomarkers like pH, Na+ and K+ in human sweat. The ISFET sensors generate a low current dc signal ...

IEEE2019

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Mihai Adrian Ionescu, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

2018

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Mihai Adrian Ionescu, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

IEEE2018

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