Reduction of the phosphorous cross-contamination in nip solar cells prepared in a single-chamber PECVD reactor
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When silicon thin films are deposited by plasma enhanced chemical vapour deposition in a plasma regime close to that of the formation of powder, a new type of material, called polymorphous silicon (pm-Si), is obtained. We present here the optoelectronic an ...
When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to that of the formation of powder, a new type of material, named polymorphous silicon (pm-Si:H) is obtained. pmSi:H exhibits enhanced transport pro ...
Using the new 'quality parameter', μoτo, the authors were able to show, for the first time, a clear correlation between transport properties of a series of a-Si:H films (grown at various deposition temperatures) and the efficiency of p-i-n cells incorporat ...
Negative ions have been clearly identified in silane rf plasmas used for the deposition of amorphous silicon. Mass spectra were measured for monosilicon up to pentasilicon negative ion radical groups in power-modulated plasmas by means of a mass spectromet ...
The texture of sputter deposited PbTiO3 films could be turned from (100)- to (111)-orientation by adding a few nm thick TiO2 layer onto the textured Pt(111) substrate film. AES, XPS, and XPD measurements showed that such TiO2 films were epitaxially ordered ...
The influence of Ta, Ti and TiO2 adhesion layers with Pt bottom electrodes and the deposition temperature of the metallization on the nucleation and growth of sol-gel derived Pb(Zr0.53Ti0.47)O-3 thin films is reported. Several different PZT annealing profi ...
The cavity ring-down technique is applied to an industrial-scale radio-frequency (rf) plasma reactor for the measurement of the density and spatial profile of negative ions in pure oxygen and hydrogen rf plasmas, and for the detection of nanometric particl ...
a-Si:H i-layers were deposited at different substrate temperatures and plasma excitation frequencies, while the other deposition parameters were kept constant. These layers were characterised by measuring the intrinsic mechanical stress and the defect dens ...