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Contrast mechanisms in high-resolution contact lithography: A comparative study

Related publications (34)

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Computational rule-based approach for corner correction of non-Manhattan geometries in mask aligner photolithography

Toralf Scharf, Wilfried Noell, Chen Yan, Raoul Kirner, Andreas Vetter

In proximity mask aligner photolithography, diffraction of light at the mask pattern is the predominant source for image shape distortions such as line end shortening and corner rounding. One established method to mitigate the impact of diffraction is opti ...

2019

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New cell-imprint surface modification techniques based on direct-cell photolithography and optical soft lithography using poly(dimethylsiloxane) (PDMS) cell imprints are presented for enhanced cell-based studies. The core concept of engineering materials f ...

AMER CHEMICAL SOC2019

Improving the resolution in mask-aligner lithography

Toralf Scharf, Wilfried Noell, Raoul Kirner, Andreas Vetter

For the back-end microfabrication in integrated circuits and for the manufacturing of light emitting diodes, proximity mask-aligner lithography is still the tool of choice, due to its simplicity and low costs. However, the downscaling of functional element ...

IEEE2018

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We present and discuss Talbot mask-aligner lithography, relying on a continuous wave laser emitting at 193nm for the illumination. In this source, a diode laser at 772nm is amplified by a tapered amplifier in master-oscillator power-amplifier configuration ...

2018

High power modular LED-based illumination system for lithography applications

Hans Peter Herzig, Marcel Groccia, Toralf Scharf, Wilfried Noell, Raoul Kirner, Johana Bernasconi

Mask-aligner lithography is a technology used to transfer patterns with critical dimensions in the micrometer range from below 1 micron for contact printing to a dozen of microns in proximity printing. This technology is widely used in the fabrication of M ...

2018

Limitations of Proximity Lithography Printing

Krishnaparvathy Puthankovilakam

Photolithography is one of the earliest technologies used to transfer patterns to a substrate. It is also known as optical lithography since it uses light to transfer the pattern. The main exposure techniques exist in the industry are projection printing, ...

EPFL2017

Unified rule based correction for corners in proximity lithography mask using high resolution features

Hans Peter Herzig, Toralf Scharf, Krishnaparvathy Puthankovilakam

Printing industry and printing techniques are increasing its market value by new methodologies. The resolution and accuracy of the pattern transfer is always a challenge for the industry, especially for the proximity printing industries which use mask alig ...

Elsevier2017

Panel: Looking Backwards and Forwards

Giovanni De Micheli

Ten years ago, at 90 nanometers, EDA was challenged and deemed inadequate in dealing with increasing complexity, power consumption, and sub-wavelength lithography, thus harming the progress of mobile phones. Today, at 10 nanometers, integration capacity ha ...

IEEE2016

Lightfields behind amplitude masks Creating phase discontinuities

Hans Peter Herzig, Toralf Scharf, Wilfried Noell, Myun Sik Kim, Krishnaparvathy Puthankovilakam

Shaping of light fields behind amplitude and phase masks the basis the lithographic structure reproduction. The aerial image or better the intensity distribution defines the resolution of the structure to be printed. Contrast is the main parameter and to a ...

Ieee2016

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Proximity exposure techniques in lithography are getting more and more popular because of the cost of ownership advantage of mask aligners compared to projection systems. In this paper a gap between simulation and the final result, the prints will be close ...

Spie-Int Soc Optical Engineering2014