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Publication
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We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorporation and photoluminescence efficiency is achieved with such optimized QW structures. Possible mechanisms of the observed increase in N uptake and reduction in defect density, related to the substrate vicinality, are discussed.
Elison de Nazareth Matioli, Alessandro Floriduz
Simon Robert Escobar Steinvall