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Characterization & Modeling of Gate-Induced-Drain-Leakage with complete overlap and fringing model

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Self-aligned normally-off metal-oxide-semiconductor n(++)GaN/InAlN/GaN high electron mobility transistors

Nicolas Grandjean, Jean-François Carlin

Self-aligned normally-off n(++)GaN/InAlN/AlN/GaN MOS HEMTs with a recessed gate show scalable threshold voltage between 1.3 to 3.7V, which increases with the gate oxide thickness. Al2O3 or HfO2 gate insulators were grown by ALD at 100 degrees C so that one ...

Wiley-V C H Verlag Gmbh2015

Tunnel Field Effect Transistors

Arnab Biswas

The aim of this work has been the investigation of homo-junction Tunnel Field Effect Transistors starting from a compact modelling perspective to its possible applications. Firstly a TCAD based simulation study is done to explain the main device characteri ...

EPFL2015

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Jian Zhang

Silicon nanowire transistors with Schottky-barrier contacts exhibit both n-type and p-type characteristics under different bias conditions. Polarity controllability of silicon nanowire transistors has been further demonstrated by using an additional polari ...

Institute of Electrical and Electronics Engineers2014

A Scalable and Adaptive Technique for Compensating Process Variations and Controlling Leakage and Delay in the FPGA

Yusuf Leblebici, Christian Piguet, Bahman Kheradmand Boroujeni

A new circuit style is proposed to tune the delay, subthreshold leakage (ISUB), and gate leakage (IG) of high fan-in multiplexer circuits, such as the FPGA Look-Up Table (LUT) and Switch-Box (SB), without increasing the Gate Induced Drain Leakage (GIDL) cu ...

American Scientific Publishers2013

Encapsulated Low Frequency Vibrating Body Field Effect Resonator

Marion Hermersdorf

Resonators for time and frequency reference applications are essential elements found in most electronic devices surrounding us. The continuous minimization and ubiquitous distribution of such electronic devices and circuits demands for resonators of small ...

EPFL2013

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011