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Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

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Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

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RF Performance of InAlN/GaN HFETs and MOSHFETs With f(T) X L-G up to 21 GHz . mu m

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205-GHz (Al,In)N/GaN HEMTs